Sensarray Inc.
Wafer da 6”, 8” e 12” con termocoppie / RTD per la misurazione del profilo di temperatura:
· Process Probe 1530 (TC-instrumented Wafer For Cold Wall Systems (0..+1100°C) (RTP, Sputtering, CVD, Plasma Strippers, Epitaxial Reactors)
· Process Probe 1535 (TC-instrumented Wafer for Hot Wall Systems (0..+1100°C) (LPCVD, diffusion,oxidation , High Pressure Oxidation)
· Process Probe 1630 (TC-instrumented Wafer for Atmospheric CVD Systems (0..+800°C) (Moving Belt/Tray Furnaces, Belt CVD, Atmospheric TEOS CVD)
· Process Probe 1730 (TC-instrumented Wafer per Real time process monitoring (-150°C ..+300°C) (Photoresist Hot Plates & Chill Plates, Ovens, Hot/Chill Prober Plates, HMDS Vapor Prime Systems, Spin on Glass Systems)
· Process Probe 1840 (RTD- instrumented Wafer per monitoraggio di processo in tempo reale (0°C ..+250°C) (HMDS Vapor Prime, Photoresist Hot chucks & Ovens, Hot/Chill Prober Plates, Spin on Glass)
· Process Probe 1850 (RTD- instrumented Wafer for Real time Process monitoring (0°C ..+400°C) (High Temperature Bake Plates, Spin on Dielectric, Polyimide Processing, Anti-reflective coatings)
· Process Probe 2130 (Fiber Optic-Instrumented Wafer for Plasma Etch(0°C ..+200°C)(Plasma Etch, Oxide Etch, Poly Etch, Metal Etch)
· Process Probe 2140 (Fiber Optic-Instrumented Wafer for Plasma Etch(-60°C ..+420°C)(Plasma Etch, PE-CVD, Ashing, Ion Implant)
· Wireless wafer per caratterizzazione profilo di temperatura in processo di litografia (standard e ad immersione - Integrated Wafer®), plasma etching (Integral Wafer®).
Sistemi di rilevazione ed analisi profilo di temperatura:
· Thermal Track 5® su palmare HP (wireless Bluetooth)
· Thermal Map 3® su notebook IBM/LENOVO
